A new 3D structure for information and energy storage devices

3D Vertical Memory with Integrated Information and Energy Storage via Solid-State Battery Interlayers

This technology features a hybrid structure that replaces the interlayer dielectric of 3D vertical memory devices with a solid-state electrolyte-based secondary battery, enabling simultaneous information and energy storage within the same device volume.

In conventional 3D vertical memory, dielectric layers are essential to prevent interference between memory cells, but they serve no purpose other than protection. This results in inefficient use of space within the device.

This technology incorporates an a-Si anode and LiCoO2 cathode into the dielectric structure to provide solid-state battery functionality, combining it with vertical memory like ReRAM to utilize internal space for energy storage. It is ideal for power-constrained IoT sensor nodes, implantable medical devices, and ultra-compact wearable chips, enabling designs that handle both data retention and self-powering on a single chip without a separate battery.

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Key Features:

• A bottom electrode formed on a substrate, serving as the base terminal for the 3D vertical memory and solid-state battery stack
• A first insulating layer formed on the bottom electrode, serving as the active memory layer and containing the solid-state battery anode
• A second insulating layer formed on the first, containing the cathode to complete the solid-state battery
• A 3D vertical memory structure featuring a top electrode and using the insulating layers as a solid-state battery

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