Semiconductor Thin Film Containing Indium-Selenide Compound, and Manufacturing Method for Thin-Film Transistors and Ferroelectric Memories Including the Same

Indium-Selenide Semiconductor Thin Film with Kappa-Phase Formed via Thermal Evaporation and Annealing

This technology is a method for manufacturing semiconductor thin films that forms a kappa-phase indium-selenide compound by coating a substrate with an In2Se3 deposition source using thermal evaporation followed by annealing.

Conventional indium-selenide thin films have been difficult to use in semiconductor devices because it is challenging to selectively form the desired crystal phase, making it hard to consistently achieve the required properties.

By forming a kappa-phase through thermal evaporation and annealing, this technology can be applied to semiconductor thin-film devices to ensure stable crystal phases and reliable device performance.

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Key Features:

• A step of forming a coating layer by depositing an In2Se3 deposition source onto a substrate using thermal evaporation.
• A step of manufacturing a semiconductor thin film containing an annealed indium-selenide compound, represented by a chemical formula, by annealing the coating layer through heat treatment.
• A semiconductor thin film in which the annealed indium-selenide compound is composed of a kappa-phase indium-selenide compound.
• A configuration for manufacturing an indium-selenide semiconductor thin film with a kappa-phase through thermal evaporation and annealing processes.

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