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IBL-26-1258

Ultrasonication-mediated self-assembly method for polythiophene thin films via controlled residual solvent evaporation

Listed on
2026-10-28
Organic semiconductor thin films with extended conjugation length via short-term atmospheric ultrasonication

This technology is a self-assembly method that accelerates residual solvent evaporation and drying by applying ultrasonic waves to a wet polythiophene thin film for 60–180 seconds immediately after spin-coating, without the need for solvent vapor. It is designed to increase the conjugation length of the thin film as the ultrasonication time increases.

To enhance molecular alignment in conjugated polymer thin films, it was previously necessary to precisely control the amount of non-solvent added and the aging time during the solution crystallization phase; failure to do so often resulted in defective, non-uniform films. While it was known that ultrasonic irradiation aids polymer alignment, there was a lack of systematic research on its effects on already-formed thin films.

This technology controls the evaporation rate of residual solvent and the conjugation length simply by adjusting processing time under ambient atmospheric conditions, without the need for solvent vapor equipment. If necessary, thermal annealing at 100°C can be added to improve substrate adhesion. It can be applied to organic thin-film transistors and low-cost flexible display backplane production lines, allowing for improved device performance by simply adding an ultrasonic step to existing spin-coating processes without requiring additional equipment like sealing chambers.

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Key Features:
  • Spin-coating a solution of poly(3-hexylthiophene) dissolved in chlorobenzene onto a substrate to create a wet thin film
  • Subjecting the wet polythiophene thin film formed on the substrate to 42 kHz ultrasonic treatment for 60–180 seconds
  • Accelerating the evaporation rate of residual solvent through ultrasonication, with the conjugation length of the polythiophene thin film increasing as processing time extends
  • Thermally annealing the dried polythiophene thin film at 100°C for 30 minutes to increase adhesion to the substrate

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Incheon National University
Park Young-don | Kim Hye-soo
Document
Date of application:
2018-07-30
|
Patent registration number:
10-1990740
Industry
semiconductors
display
Technology
Semiconductor
Country
Korea
Family Patent

N/A

Price
6000000
Fixed price
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