This technology relates to a halide perovskite-based resistive switching memory device comprising a bottom electrode layer, a multi-layered resistive switching layer, and a top electrode layer, as well as its manufacturing method.
Halide perovskite-based resistive switching memory has faced reliability limitations, such as durability and stability, compared to oxide-based counterparts.
This technology improves reliability and durability by controlling the formation and rupture of conductive filaments within the multi-layered resistive switching layer.
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