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IBL-26-1907

Silicon Nano-Anode Material, Manufacturing Method Thereof, and Lithium Secondary Battery Including the Same

Listed on
2026-09-16
Secondary Battery› Materials› Anode Materials
Crystalline Silicon Anode Material with Enhanced Conductivity via Lattice and Surface Fluorination

This technology is a silicon-based anode material that improves electronic conductivity by introducing fluorine into the lattice and surface of crystalline silicon particles, and enhances tap density by forming secondary aggregates of nanoparticles.

Existing silicon anode materials have faced challenges such as low electrical conductivity, structural instability due to volume expansion during charge and discharge cycles, reaction non-uniformity caused by surface oxidation (SiOx), and low tap density.

This technology synthesizes silicon nanoparticles doped with fluorine within the crystal lattice and on the surface through a Solid-Vapor-Solid (SVS) reaction process using solid-state precursors (Na2SiF6) and reducing agents (such as Mg). By manufacturing these into a secondary aggregate structure, it can effectively contribute to securing commercial competitiveness for secondary battery anode materials.

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Key Features:
  • Crystalline silicon particles containing fluorine within the lattice and on the surface of the crystal structure, with an electronic conductivity of 0.8 to 2.0
  • Nano-anode material comprising crystalline silicon with fluorine introduced into the lattice and surface to improve electronic conductivity
  • Step of preparing a mixture by uniformly mixing a solid-state precursor containing silicon and fluorine with a solid-state reducing agent
  • Step of manufacturing an anode material by calcining the mixture to form crystalline silicon with fluorine introduced into the lattice and surface

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Pohang University of Science & Technology
Park Su-jin | Lee Sang-yeop | Song Gyu-jin
Document
Date of application:
2024-09-04
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Patent registration number:
10-2897995
Industry
battery
Technology
Energy•Battery
Chemistry
Country
Korea
Family Patent

N/A

Price
Price negotiable
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