This technology is a complementary field-effect transistor and its manufacturing method, which converts a p-type channel to an n-type by selectively forming and annealing a multiplexed polyvinyl alcohol polymer conversion induction layer between the source and drain of a carbon nanotube channel layer using a photolithography process. A high-k dielectric leakage prevention layer can be placed between the bottom gate and the channel.
Silicon MOSFETs have faced physical limitations in both processing and performance due to short-channel effects and increased standby leakage current caused by continuous miniaturization. Carbon nanotubes, an alternative material, inherently exhibit p-type characteristics, creating a limitation where there is a lack of mass-producible techniques to convert only desired areas to n-type to implement complementary circuits.
This technology uses photosensitive polyvinyl alcohol compatible with standard semiconductor photolithography processes, making it easy to convert types according to desired patterns, enabling mass production, reducing costs, and ensuring high reliability. It can be applied to next-generation low-power logic circuits, flexible electronic devices, and carbon nanotube-based integrated circuit manufacturing, providing a path for CMOS implementation that overcomes the limitations of silicon miniaturization.
This invention was developed with support from the Ministry of Science and ICT for the formation of low-dimensional transition metal chalcogen-aligned CNT-based nanostructure heterojunctions and wafer-scale smart sensor applications.
US10978513B2
