This technology is a method for manufacturing MIM capacitors by depositing a yttrium-doped zirconium oxide dielectric layer on a ruthenium bottom electrode using supercycle atomic layer deposition, followed by annealing in a nitrogen atmosphere at 800°C and forming a ruthenium top electrode via sputtering. The yttrium content is set to 3.69% by using a deposition ratio of one yttrium oxide cycle to two zirconium oxide cycles.
Miniaturizing memory devices like DRAM requires both high permittivity and low leakage current, which has been difficult to achieve with conventional binary oxide structures such as ZrO2/Al2O3/ZrO2. Multiphase dielectric films like SrTiO3 or BaSrTiO3 remain in the research stage, posing challenges for industrial implementation.
This technology uses supercycle deposition to control doping concentration at the atomic level without additional processes, allowing yttrium doping to increase the permittivity of zirconia and improve insulation properties. As a result, capacitor storage capacity increases while leakage current decreases. It can be applied to DRAM cell capacitors and embedded memory processes using existing high-k equipment, enabling expansion to next-generation micro-devices without the burden of introducing new dielectric materials.
This invention was developed with support from the Ministry of Trade, Industry and Energy for the development of SiN/SiO2 plasma atomic layer deposition processes and alternative technologies for gate spacers and multi-patterning.
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