This technology relates to a field-effect transistor device capable of enhancement-mode operation. Specifically, it is an enhancement-mode FET device technology utilizing a beta-gallium oxide channel and a ferroelectric layer.
In conventional technology, there was a need to solve the technical challenge of implementing enhanced mode operation in field-effect transistors using beta-gallium oxide (β-Ga2O3) compared to prior art. To address this, the present technology proposes a configuration comprising an insulating layer arranged on a ferroelectric semiconductor layer having a band gap of at least 1.4 eV, based on van der Waals bonding, and a beta-gallium oxide (β-Ga2O3) channel layer.
Accordingly, this technology can improve the breakdown voltage characteristics of field-effect transistor devices by forming a passivation layer between the semiconductor mesa structure and the drain electrode. It has value for utilization in the fields of semiconductors, equipment, electronic components, and advanced materials.
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