This technology relates to a method of manufacturing a high-quality, large-area metal chalcogenide thin film with uniform thickness and composition by coating a polymer-precursor solution containing a polymer and a metal chalcogenide compound precursor on a substrate, and a method of manufacturing an electronic device containing the metal chalcogenide thin film.
Semiconductor metal chalcogenide has an appropriate band gap and an electron mobility of hundreds of cm2/V·s. Since it is visible, it is suitable for application in semiconductor devices such as transistors and has great potential for flexible transistor devices, but there is a problem in that it is difficult to satisfy these conditions when making a thin film in a solution. To solve this problem, this technology proposes a new concept of forming a polymer thin film layer on the substrate to ensure that all reactions occur only at the interface of the substrate.
The method of manufacturing metal chalcogenide thin films according to this technology is not only effective in providing high-quality thin films with a large area of 6 inches or more with uniform thickness and composition through low production costs and simple processes, but also electronic devices containing large-area metal chalcogenide thin films can have high charge mobility and modulate band structure according to thickness, and can implement flexible substrates, so they can be applied to various fields such as high-performance transistors, optical devices, catalysts, and energy materials.
This technology was developed through support from the National Research Foundation of Korea's research project on solution-based direct growth and micropatterning of metal chalcogen ultrathin films on large-area flexible substrates.'
N/A
